Three-dimensional atomic-scale investigation of defects in semiconductors by atom probe tomography

Three-dimensional atomic-scale investigation of defects in semiconductors by atom probe tomography

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In this chapter, the role of APT in the investigation of extended defects and solute segregation in semiconductors is discussed on the basis of several salient studies mainly carried out in our laboratory (Groupe de Physique des Materiaux) and dealing with one-dimensional (1D) (dislocations), two-dimensional (2D) (interfaces, SFs, GBs) and 3D defects (clusters, QDs). The principles of APT are first presented including a discussion of limitations in terms of spatial resolution and quantitativity. Results and performances are also compared to those of SIMS.

Chapter Contents:

  • 9.1 Introduction
  • 9.2 Atom probe tomography
  • 9.2.1 Generalities and history
  • 9.2.2 Principles and performances
  • 9.2.3 APT versus SIMS
  • 9.3 Three-dimensional defects
  • 9.3.1 Nanocrystals, quantum dots
  • 9.3.2 Impurity clusters
  • 9.4 Two-dimensional defects
  • 9.4.1 Segregation to stacking faults
  • 9.4.2 Stacking faults in heterostructures
  • 9.4.3 Intergranular segregation of dopants in silicon
  • 9.4.4 Segregation of dopants to gate interfaces in MOSFET transistors
  • 9.5 One-dimensional defects
  • 9.6 Point defects
  • 9.6.1 Three-dimensional field ion microscopy
  • 9.6.2 In situ photoluminescence
  • 9.7 Conclusion
  • Acknowledgements
  • References

Inspec keywords: stacking faults; tomography; extended defects; segregation; semiconductor materials; grain boundaries

Other keywords: two-dimensional interfaces; GBs; SFs; atom probe tomography; one-dimensional dislocations; 3D defects; extended defects; SIMS; semiconductor materials; three-dimensional atomic-scale investigation; solute segregation

Subjects: Stacking faults, stacking fault tetrahedra and other planar or extended defects; Grain and twin boundaries; Solubility, segregation, and mixing; Surface diffusion, segregation and interfacial compound formation

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