http://iet.metastore.ingenta.com
1887

Magnetic resonance methods

Magnetic resonance methods

For access to this article, please select a purchase option:

Buy chapter PDF
$16.00
(plus tax if applicable)
Buy Knowledge Pack
10 chapters for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Characterisation and Control of Defects in Semiconductors — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

In this chapter, we will focus on the study by EPR of point defects in semiconductor materials. Indeed, impurities, vacancies, anti -sites and complexes of them, in a diamagnetic material, may exhibit a local electronic reconstruction favoring unpaired electrons, and consequently, such defects have a nonzero electon spin. Of course, point defects may exist in an S = 0 state and then be EPR silent. Nevertheless, in semiconductors, most of the point defects have several charge states in the gap, and generally, each of them corresponds to a different spin state. Changing the defect charge state by electrical polarization or by light irradiation is then an efficient mean to reveal and detect the defects by EPR.

Chapter Contents:

  • 4.1 Electron spin resonance spectroscopies
  • 4.1.1 What is EPR used for?
  • 4.1.2 Spin Hamiltonian formalism
  • 4.1.2.1 Zero-field splitting
  • 4.1.3 Hyperfine interactions
  • 4.1.4 Resonance
  • 4.1.4.1 Selection rules
  • 4.1.5 Transition probability: relaxation phenomena
  • 4.1.6 Experimental setup
  • 4.1.6.1 Choice of microwave frequency
  • 4.1.7 Electron nuclear double resonance
  • 4.1.8 Pulsed spectroscopies
  • 4.1.9 Optically detected magnetic resonance, electrically detected magnetic resonance
  • 4.2 Illustrative examples: structural and chemical control
  • 4.2.1 The SiC/oxide interface defects
  • 4.2.1.1 Energy level position
  • 4.2.1.2 Passivation
  • 4.2.2 The N dumbbell in GaN
  • 4.3 Examples: electrical and optical activities
  • 4.3.1 P-Type doping of GaN
  • 4.3.2 Origin of the residual conductivity of Ga2O3
  • 4.3.3 SiC defects as quantum bits
  • 4.4 Summary and outlook
  • References

Inspec keywords: magnetic semiconductors; vacancies (crystal); paramagnetic resonance; impurities; antisite defects; diamagnetic materials; defect states

Other keywords: defect charge states; light irradiation; electrical polarization; semiconductor materials; magnetic resonance methods; vacancies; diamagnetic material; spin state; antisites; point defects; EPR; impurities; local electronic reconstruction

Subjects: EPR of other ions and impurities; Other point defects; Interstitials and vacancies; Magnetic semiconductors; Impurity concentration, distribution, and gradients

Preview this chapter:
Zoom in
Zoomout

Magnetic resonance methods, Page 1 of 2

| /docserver/preview/fulltext/books/cs/pbcs045e/PBCS045E_ch4-1.gif /docserver/preview/fulltext/books/cs/pbcs045e/PBCS045E_ch4-2.gif

Related content

content/books/10.1049/pbcs045e_ch4
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address