This chapter provides an overview of the theory, experimental methods, and examples of vibrational spectroscopy applied to defects in semiconductors. Additional information about IR spectroscopy and Raman scattering is discussed. Local vibrational modes in semiconductors are reviewed. There are also reviews for specific materials systems such as defects in silicon, III-V semiconductors and ZnO, and hydrogen in compound semiconductors.

Chapter Contents:

• 3.1 Theory
• 3.1.1 Units
• 3.1.2 Linear chain
• 3.1.3 Defect vibrational modes
• 3.1.4 Anharmonic potential
• 3.1.5 IR activity
• 3.1.6 Number of atoms
• 3.1.7 Infrared absorption
• 3.1.8 Linewidth and temperature dependence
• 3.1.9 Wave functions and symmetry
• 3.1.10 Anharmonic coupling
• 3.1.11 Raman scattering
• 3.2 Experiment
• 3.2.1 Raman spectroscopy
• 3.2.2 Fourier transform infrared spectroscopy
• 3.2.3 IR pump–probe
• 3.2.4 Applied stress
• 3.3 Examples
• 3.3.1 Interstitial oxygen
• 3.3.1.1 Silicon
• 3.3.1.2 Germanium
• 3.3.1.3 Silicon under pressure
• 3.3.2 Impurities in GaAs
• 3.3.2.1 Carbon
• 3.3.2.2 Silicon
• 3.3.2.3 Oxygen
• 3.3.3 Resonant interaction in AlSb
• 3.3.4 Impurities in CdTe
• 3.3.5 Hydrogen in silicon
• 3.3.6 Impurity-hydrogen pairs: trends
• 3.3.7 MgH complex in GaN
• 3.3.8 NH complex in ZnO
• 3.3.9 Hydrogen donors in oxide semiconductors
• 3.3.9.1 ZnO
• 3.3.9.2 SnO2
• 3.3.9.3 In2O3
• 3.3.9.4 TiO2
• 3.3.10 Vacancy-hydrogen complexes
• 3.3.11 Hydrogen in strontium titanate
• 3.3.12 Hydrogen molecules
• 3.3.13 From LVM to phonon
• 3.4 Summary and outlook
• Acknowledgements
• References

Inspec keywords: III-V semiconductors; vibrational modes; infrared spectra; II-VI semiconductors; silicon; zinc compounds; crystal defects; Raman spectra; elemental semiconductors

Other keywords: Raman scattering; defects; compound semiconductors; local vibrational modes; ZnO; vibrational spectroscopy; III-V semiconductors; Si; IR spectroscopy

Subjects: Infrared and Raman spectra in inorganic crystals; Localized modes in crystal lattices