http://iet.metastore.ingenta.com
1887

Luminescence from point defects in widebandgap, direct-gap semiconductors

Luminescence from point defects in widebandgap, direct-gap semiconductors

For access to this article, please select a purchase option:

Buy chapter PDF
$16.00
(plus tax if applicable)
Buy Knowledge Pack
10 chapters for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Characterisation and Control of Defects in Semiconductors — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

In this chapter, phenomenological theories of PL are presented and compared with experimental results on PL from wide-bandgap semiconductors, primarily GaN. Types of electron transitions leading to PL are defined in Section 2.2. The rate equations model and the configuration-coordinate (CC) model are presented in Section 2.3. In particular, we will show how to estimate the concentrations of defects and reveal their important characteristics such as the energy levels, carrier capture coefficients, electron-phonon coupling strength, excited states.

Chapter Contents:

  • 2.1 Introduction
  • 2.2 Types of transitions related to photoluminescence
  • 2.3 Phenomenological models
  • 2.3.1 Rate equations model
  • 2.3.1.1 Temperature dependence of PL intensity
  • 2.3.1.2 Abrupt and tunable quenching of PL
  • 2.3.1.3 PL lifetime
  • 2.3.1.4 Determination of the absolute internal quantum efficiency of PL
  • 2.3.1.5 Determination of the concentration of radiative defects
  • 2.3.2 Configuration-coordinate model
  • 2.3.3 Diagonal transitions between localized states
  • 2.3.3.1 Donor–acceptor pairs
  • 2.3.3.2 Effect of potential fluctuations
  • 2.3.4 Summary
  • 2.4 Experiment: photoluminescence from defects
  • 2.4.1 Radiative defects in GaN
  • 2.4.1.1 Defect-related PL bands in undoped GaN
  • 2.4.1.2 Yellow luminescence
  • 2.4.1.3 Photoluminescence in Mg-doped GaN
  • 2.4.2 Defect-related photoluminescence in other wide bandgaps
  • 2.4.2.1 PL bands in ZnO
  • 2.4.2.2 PL bands in AlN
  • 2.4.3 Summary
  • 2.5 Conclusions and outlook
  • References

Inspec keywords: excited states; wide band gap semiconductors; electron-phonon interactions; defect states; III-V semiconductors; gallium compounds; photoluminescence; point defects

Other keywords: carrier capture coefficients; excited states; defect concentrations; energy level; electron-phonon coupling strength; gallium nitride; GaN; rate equations; wide band gap semiconductors; direct gap semiconductors; photoluminescence

Subjects: Phonon-electron interactions; Photoluminescence in II-VI and III-V semiconductors; Polarons and electron-phonon interactions; Other point defects; Impurity and defect levels in II-VI and III-V semiconductors

Preview this chapter:
Zoom in
Zoomout

Luminescence from point defects in widebandgap, direct-gap semiconductors, Page 1 of 2

| /docserver/preview/fulltext/books/cs/pbcs045e/PBCS045E_ch2-1.gif /docserver/preview/fulltext/books/cs/pbcs045e/PBCS045E_ch2-2.gif

Related content

content/books/10.1049/pbcs045e_ch2
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address