This chapter deals with the use of ion beam analysis (IBA) techniques, in particular in channeling geometry, to study defects in semiconductors. After a tutorial (Section 11.1) introducing the basic principles of IBA and channeling techniques, selected examples of their use to characterize defects (e.g., lattice location of dopants and implantation damage) are described in Section 11.2. Finally, Section 11.3 consists of a brief outlook into future developments and applications.

Chapter Contents:

• 11.1 Tutorial
• 11.1.1 Ion beam analysis
• 11.1.1.1 Atomic collisions
• 11.1.1.2 Energy loss
• 11.1.1.3 Elemental analysis
• 11.1.2 Channeling techniques
• 11.1.2.1 Introduction to ion channeling
• 11.1.2.2 Characterization of defects and damage
• 11.1.2.3 Lattice location
• 11.2 Examples
• 11.2.1 Damage in semiconductors
• 11.2.1.1 Damage in GaN
• 11.2.1.2 Damage in ternary nitrides
• 11.2.1.3 Damage in ZnO
• 11.2.2 Lattice location of dopants
• 11.2.2.1 Optical dopants in GaN
• 11.2.2.2 Electrical dopants in wide-gap semiconductors: Mg in GaN and AlN and Na in ZnO
• 11.2.2.3 Magnetic dopants in dilute magnetic semiconductors
• 11.3 Outlook
• 11.3.1 Technical developments
• 11.3.2 Emerging applications

Inspec keywords: semiconductor doping; vacancies (crystal); ion implantation

Other keywords: lattice location; implantation damage; ion beam analysis; channeling techniques; channeling geometry; semiconductors

Subjects: Semiconductor doping; Doping and implantation of impurities; Ion beam effects; Interstitials and vacancies