@CHAPTER{ iet:/content/books/10.1049/pbcs039e_ch6, author = {Jorge Romero-González}, affiliation = {Department of Electrical and Computer Engineering, University of Utah}, author = {Pierre-Emmanuel Gaillardon}, affiliation = {Department of Electrical and Computer Engineering, University of Utah}, keywords = {temperature;channel length;TIGFET technology;short-channel effects;voltage;device-level simulations;three-independent gate FET;super steep subthreshold slope;fabrication techniques;}, title = {Three-independent gate FET's super steep subthreshold slope}, booktitle = Functionality-Enhanced Devices An alternative to Moore's Law, publisher = {Institution of Engineering and Technology}, year = {2018}, pages = {107-127}, series = {Materials, Circuits and Devices}, doi = {10.1049/PBCS039E_ch6}, url = {https://digital-library.theiet.org/;jsessionid=4mckcpl8jfnk9.x-iet-live-01content/books/10.1049/pbcs039e_ch6} }