Three-independent gate FET's super steep subthreshold slope

Three-independent gate FET's super steep subthreshold slope

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The device characteristics of TIGFET technology, in particular the steep subthreshold slope (SS), have been studied in detail in this chapter. Notably, we have (1) summarized TIGFET's working principle and fabrication techniques, (2) reviewed experimental demonstrations of SSmin in TIGFETs with respect to voltage and temperature, and (3) performed device-level simulations to display and thoroughly explain the SS capabilities of TIGFETs with respect to channel length and voltage. Our results allow us to develop an in-depth explanation into the origin of steep SS and the potential limitations of SS in TIGFETs due to short-channel effects.

Chapter Contents:

  • 6.1 Introduction
  • 6.2 Subthreshold slope
  • 6.3 TIGFET background
  • 6.4 TIGFET working principle
  • 6.5 Structure and fabrication of TIGFETs
  • 6.5.1 Device structure and fabrication
  • 6.6 SS dependency in TIGFETs
  • 6.6.1 Experimental dependency on voltage
  • 6.6.2 Origin of voltage dependency
  • Body effect
  • Activation energy
  • 6.6.3 Experimental dependency on temperature
  • 6.6.4 Origin of temperature dependency
  • 6.7 SS behavior from device simulations
  • 6.7.1 TCAD Sentaurus design
  • 6.7.2 SS dependency on long-channel devices
  • 6.7.3 SS dependency on voltage
  • 6.7.4 SS dependency on TIGFET's short-channel effects
  • 6.8 Conclusion
  • Acknowledgment
  • References

Inspec keywords: MOSFET; reviews; semiconductor device models

Other keywords: voltage; TIGFET technology; temperature; channel length; fabrication techniques; super steep subthreshold slope; short-channel effects; three-independent gate FET; device-level simulations

Subjects: Insulated gate field effect transistors; Semiconductor device modelling, equivalent circuits, design and testing

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