Carrier type control of MX2 type 2D materials for functionality-enhanced transistors

Carrier type control of MX2 type 2D materials for functionality-enhanced transistors

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The book chapter highlights the application of MX2 type 2D materials to the polarity-controllable transistors, especially focused on the polarity control of carriers injected into TMDC materials. One of the bottlenecks in realization of polarity-controllable transistors consists in carrier injection of both electrons and holes into intrinsic semiconductor channel through Schottky junctions, and therefore, a novel method overcoming this bottleneck had been desired. Here, it was reviewed that the new kind of semiconducting materials of TMDCs has a promising feature for this purpose, and also, MoTe2, which is one of the TMDC family, has a great potential for polarity controllable transistors for its weak Fermi level pinning effect.

Chapter Contents:

  • 5.1 MX2 materials
  • 5.1.1 2D materials for FEDs
  • 5.1.2 Crystalline structure and electric characteristics of TMDCs
  • 5.2 MX2 materials in transistors
  • 5.2.1 Need for 2D materials channel in advanced FETs
  • 5.2.2 Carrier doping
  • 5.2.3 Carrier injection via Schottky junctions
  • 5.2.4 Fermi level pinning
  • 5.3 Polarity controllable transistors on MoTe2
  • 5.3.1 Ambipolar channels for polarity controllable transistors
  • 5.3.2 MoTe2 channel
  • 5.3.3 Single top gate device on MoTe2
  • 5.3.4 Dual top-gate device on MoTe2
  • 5.3.5 Issues in top-gate dielectrics
  • 5.4 Enhanced ambipolarity by Schottky junction engineering in MoTe2
  • 5.4.1 Schottky junctions in MoTe2
  • 5.4.2 Barrier heights of MoTe2 Schottky junctions
  • 5.4.3 Enhanced ambipolarity in MoTe2
  • 5.5 Conclusions
  • References

Inspec keywords: Fermi level; Schottky gate field effect transistors; interface states; molybdenum compounds; semiconductor materials; reviews

Other keywords: Schottky junctions; polarity control; intrinsic semiconductor channel; electrons; holes; carrier injection; MX2 type 2D materials; semiconducting materials; carrier type control; TMDC materials; MoTe2; functionality-enhanced transistors; Fermi level pinning

Subjects: Other field effect devices; Other semiconductor materials

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