The book chapter is dedicated to polarity-controllable devices fabricated with two dimensional (2D) semiconducting tungsten diselenide (WSe₂). The chapter is organized as follows: first, a general introduction on 2D materials is presented, followed by a section dedicated to summarize the state of the art in the growth of 2D materials. The concept of ambipolarity is then introduced, and the main experimental results on WSe₂ ambipolar devices are presented. We transition then to the core part of the chapter describing recent advances in polarity-controllable transistors fabricated with ambipolar WSe₂. We then focus on quantum transport simulations carried out to assess the performances of the devices at ultra-scaled gate lengths. We conclude with a summary, highlighting the main concept presented.

Chapter Contents:

• 4.1 Two-dimensional transition metal dichalcogenides
• 4.1.1 Synthesis of two-dimensional materials
• 4.1.2 Value of ambipolarity
• 4.2 Polarity-controllable devices on WSe2
• 4.3 Quantum transport simulations
• 4.4 Summary
• References

Inspec keywords: Schottky gate field effect transistors; tungsten compounds; reviews; semiconductor materials; semiconductor growth; semiconductor device models; quantum interference devices

Other keywords: quantum transport simulations; growth; two dimensional semiconducting tungsten diselenide; ambipolarity; 2D materials; WSe₂ ; WSe₂ polarity-controllable devices; ultra-scaled gate lengths; ambipolar devices

Subjects: Quantum interference devices; Semiconductor device modelling, equivalent circuits, design and testing; Other semiconductor materials; Other field effect devices; Thin film growth and epitaxy