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Wse2 polarity-controllable devices

Wse2 polarity-controllable devices

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The book chapter is dedicated to polarity-controllable devices fabricated with two dimensional (2D) semiconducting tungsten diselenide (WSe2). The chapter is organized as follows: first, a general introduction on 2D materials is presented, followed by a section dedicated to summarize the state of the art in the growth of 2D materials. The concept of ambipolarity is then introduced, and the main experimental results on WSe2 ambipolar devices are presented. We transition then to the core part of the chapter describing recent advances in polarity-controllable transistors fabricated with ambipolar WSe2. We then focus on quantum transport simulations carried out to assess the performances of the devices at ultra-scaled gate lengths. We conclude with a summary, highlighting the main concept presented.

Chapter Contents:

  • 4.1 Two-dimensional transition metal dichalcogenides
  • 4.1.1 Synthesis of two-dimensional materials
  • 4.1.2 Value of ambipolarity
  • 4.2 Polarity-controllable devices on WSe2
  • 4.3 Quantum transport simulations
  • 4.4 Summary
  • References

Inspec keywords: Schottky gate field effect transistors; tungsten compounds; reviews; semiconductor materials; semiconductor growth; semiconductor device models; quantum interference devices

Other keywords: quantum transport simulations; growth; two dimensional semiconducting tungsten diselenide; ambipolarity; 2D materials; WSe2; WSe2 polarity-controllable devices; ultra-scaled gate lengths; ambipolar devices

Subjects: Quantum interference devices; Semiconductor device modelling, equivalent circuits, design and testing; Other semiconductor materials; Other field effect devices; Thin film growth and epitaxy

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