The book chapter provides a brief overview of some of the prominent features of non-carbon 2D materials that are currently being investigated and predicted to play significant role in the development of ultrathin electronic and optoelectronic devices in the coming years that could push the boundaries of current CMOS technology.

Chapter Contents:

• 3.1 2D materials for functionality-enhanced devices
• 3.1.1 Introduction
• 3.1.2 Non-carbon 2D materials with bandgaps
• 3.1.2.1 Hexagonal boron nitride
• 3.1.2.2 Phosphorene
• 3.1.2.3 Transition metal dichalcogenides
• 3.2 Large area growth of 2D materials
• 3.2.1 Introduction
• 3.2.1.1 Chemical vapor deposition
• 3.2.1.2 Metal-organic chemical vapor deposition
• 3.2.1.3 Molecular beam epitaxy
• 3.3 Metal-semiconductor contacts and 2D heterostructures
• 3.4 2D materials for steep slope devices
• 3.4.1 Band to band carrier tunneling (BTBT) in 2D systems
• 3.4.2 Tunnel field effect transistors
• 3.4.3 Resonant tunneling devices/diodes
• 3.5 Circuit and system applications
• 3.5.1 RF applications
• 3.6 List of abbreviations
• References

Inspec keywords: boron compounds; semiconductor devices; chemical vapour deposition; reviews; III-V semiconductors; molecular beam epitaxial growth; transition metal compounds; phosphorus; semiconductor growth; elemental semiconductors

Other keywords: overview; BN; ultrathin optoelectronic devices; two-dimensional materials; P; noncarbon 2D materials; functionality-enhanced devices; optoelectronic devices

Subjects: II-VI and III-V semiconductors; Chemical vapour deposition; Semiconductor devices; Elemental semiconductors; Vacuum deposition