BCB benchmarking for three-independent-gate field effect transistors

BCB benchmarking for three-independent-gate field effect transistors

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In this book chapter, a detailed explanation is given for the introduction of TIGFET devices into the BCB methodology. The fundamental principles of TIGFET technology are presented. The intrinsic device model under consideration is described and the basic circuit-level opportunities are investigated. The equations for area, delay, energy, and power for the various circuits are listed and the results are outlined and thoroughly examined.

Chapter Contents:

  • 10.1 Introduction
  • 10.2 TIGFET principles
  • 10.2.1 Generalities
  • 10.2.2 Fabrication techniques
  • 10.2.3 Working principle
  • 10.2.4 Logic behavior
  • 10.3 Device-level considerations
  • 10.3.1 Electrical properties
  • 10.3.2 Capacitance consideration
  • 10.3.3 Layout considerations
  • 10.4 Circuit-level opportunities
  • 10.5 Performance evaluation
  • 10.5.1 Area estimation
  • Area summary
  • 10.5.2 Delay estimation
  • 10.5.3 Energy estimation
  • 10.5.4 Standby power estimation
  • 10.6 Comparison of technologies
  • 10.6.1 Device-level performance
  • 10.6.2 Circuit-level performance
  • 10.6.3 Origin of EDP results
  • 10.7 Conclusion
  • Acknowledgment
  • References

Inspec keywords: semiconductor device testing; Schottky gate field effect transistors; MOSFET; semiconductor device models; benchmark testing

Other keywords: area; power; intrinsic device model; delay; energy; BCB benchmarking; TIGFET devices; three-independent-gate field effect transistors

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Other field effect devices; Insulated gate field effect transistors

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