Physical design techniques for RF CMOS

Physical design techniques for RF CMOS

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Even in the case of a terahertz circuit design, circuit simulators are still used in circuit design. However, design environments and techniques are not as well established as for radio-frequency (RF) complementary metal-oxide-semiconductor (CMOS) circuits. Thus, various preparations are required before using the circuit simulator to design ultrahigh-frequency circuits operating at millimeter wave (mmw) or terahertz. Although this preparation occasionally occupies a lot of time of work, it is no exaggeration to say that the success or failure of circuit design is determined by the quality of this preparation. This section reviews recent progress made by the authors in terahertz CMOS design including device characterization and modeling techniques.

Chapter Contents:

  • 3.1 Physical design [1]
  • 3.1.1 Bond-based design
  • 3.1.2 Power-line decoupling
  • 3.2 Measurement and de-embedding
  • 3.2.1 Probing in on-wafer measurement [12]
  • 3.2.2 De-embedding
  • Basic idea of de-embedding
  • Thru–reflect–line (TRL)
  • Multi-line TRL in terahertz [1]
  • Split I for low frequency [19]
  • 3.2.3 Parameter extraction for EM field simulation [1]
  • 3.3 Device modeling
  • 3.3.1 Small-signal equivalent-circuit modeling
  • Small-signal equivalent circuit of integrated-circuit device
  • 3.3.2 MOSFET parasitic resistances at millimeter wave [1]
  • References

Inspec keywords: integrated circuit design; terahertz wave devices; field effect MIMIC; submillimetre wave integrated circuits; CMOS integrated circuits; circuit simulation

Other keywords: circuit simulator; terahertz circuit design; device characterization; physical design techniques; modeling techniques; millimeter wave circuit; RF CMOS; ultrahigh-frequency circuits

Subjects: CMOS integrated circuits; Semiconductor integrated circuit design, layout, modelling and testing; Microwave integrated circuits

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