RT Chapter SR Electronic(1) A1 Shairfe Muhammad Salahuddin AD Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology A1 Volkan Kursun AD Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology YR 2016 T1 Data stability and write ability enhancement techniques for FinFET SRAM circuits T2 Nano-CMOS and Post-CMOS Electronics: Circuits and Design PB Institution of Engineering and Technology JF Materials, Circuits and Devices SN 9781849199995 DO 10.1049/PBCS030E_ch4 UL https://digital-library.theiet.org/;jsessionid=1kt3sqe80b06e.x-iet-live-01content/books/10.1049/pbcs030e_ch4