This chapter describes nanoscale FinFET devices and their application in SRAM design. It also discusses variability of nanoscale integrated circuits (ICs) and introduces variability-aware memory design. In the previous two chapters, process variations were discussed for analog and digital ICs. However, this chapter focuses on futuristic memory design. A comprehensive variability including process, voltage and temperature (PVT) variations has been discussed for future SRAM design. After analysing the results of PVT-aware designs, it is found that sensitivity-driven IG-FinFET-based SRAM is the most suitable technique for reliable and high-density memories. The design of SRAM using a post-CMOS device, namely FinFET widely adopted in semiconductor industry has been specifically elaborated.

Chapter Contents:

• 3.1 Introduction
• 3.2 Nanoscale FinFET devices
• 3.2.1. Bulk FinFET
• 3.2.2. SOI FinFET
• 3.2.2.1 Shorted-gate FinFET (SG-FinFET)
• 3.2.2.2 Omega-gate FinFET (Ω-gate FinFET)
• 3.2.2.3 Independent-gate FinFET (IG-FinFET)
• 3.3 FinFET-based SRAM topologies
• 3.3.1. IG-FinFET-based 6T SRAM
• 3.3.1.1 Read and write operation
• 3.3.1.2 SRAM cell design
• 3.3.2. Back-gate bias IG-FinFET-based 6T SRAM
• 3.3.3. IG-FinFET-based PPN 10T SRAM
• 3.3.3.1 Back-gate bias PPN 10T SRAM
• 3.3.3.2 Cross-coupled back-gate bias PPN 10T SRAM
• 3.3.3.3 Hybrid back-gate bias PPN 10T SRAM
• 3.3.4. Stability analysis
• 3.4 FinFET-based SRAM design challenges
• 3.5 PVT-aware SRAM design
• 3.5.1 PVT mitigation techniques
• 3.5.1.1 Static mitigation techniques
• 3.5.1.2 Dynamic mitigation techniques
• 3.5.2 PVT-aware SRAM designs
• 3.5.2.1 NBL-driven design
• 3.5.2.2 Leakage-driven design
• 3.5.2.3 Sensitivity-driven design
• 3.5.3 Stability analysis
• 3.6 Conclusion
• References

Inspec keywords: integrated circuit design; MOSFET circuits; nanoelectronics; SRAM chips

Other keywords: nanoscale integrated circuits; semiconductor industry; PVT-aware SRAM design; analog ICs; nanoscale FinFET devices; ICs; variability-aware memory design; sensitivity-driven IG-FinFET-based SRAM; digital ICs; post-CMOS device; process-voltage and temperature variations

Subjects: Memory circuits; Semiconductor storage; Semiconductor integrated circuit design, layout, modelling and testing