Heterostructure bipolar transistors
In this chapter, the design principle of heterostructure devices has been discussed. Critical issues for numerical modelling of heterostructure devices have been discussed. Several examples of simulation of devices employing SiGe HBTs have been considered. Attention has been given to simulation of various advanced technologies leading to high cut-off frequency and/or low transit time. Good agreement between simulation and measurement provides confidence in the use of device simulation for future device development. Transit time analysis of a SiGe HBT using drift-diffusion (DD), hydrodynamic(HD) and full-band Monte Carlo simulations has been discussed in detail. Detail transit time analysis at low temperature for a SiGe HBT has also been performed, which shows its applicability in low-temperature electronics.
Heterostructure bipolar transistors, Page 1 of 2
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