http://iet.metastore.ingenta.com
1887

## Electronic Properties of Alloy Layers

• DOI:

$16.00 (plus tax if applicable) ##### Buy Knowledge Pack 10 chapters for$120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:

Strained Silicon Heterostructures: materials and devices — Recommend this title to your library

## Thank you

In a physical device the mobility of prime concern is drift mobility which for the bulk is measured typically by a time-of-flight method. Hall mobility provides an indirect estimate of the mobility behavior and is often a good indicator. Mobility in an actual MOS device is inferred indirectly from the current-voltage relation. Experimental results of electron and hole mobility in strained Si, SiGe and SiGeC are discussed and compared with predictions from simulation.

Inspec keywords:

Preview this chapter:

Electronic Properties of Alloy Layers, Page 1 of 2

| /docserver/preview/fulltext/books/cs/pbcs012e/PBCS012E_ch3-1.gif /docserver/preview/fulltext/books/cs/pbcs012e/PBCS012E_ch3-2.gif

### Related content

content/books/10.1049/pbcs012e_ch3
pub_keyword,iet_inspecKeyword,pub_concept
6
6
This is a required field