http://iet.metastore.ingenta.com
1887

Electronic Properties of Alloy Layers

Electronic Properties of Alloy Layers

For access to this article, please select a purchase option:

Buy chapter PDF
$16.00
(plus tax if applicable)
Buy Knowledge Pack
10 chapters for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Strained Silicon Heterostructures: materials and devices — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

In a physical device the mobility of prime concern is drift mobility which for the bulk is measured typically by a time-of-flight method. Hall mobility provides an indirect estimate of the mobility behavior and is often a good indicator. Mobility in an actual MOS device is inferred indirectly from the current-voltage relation. Experimental results of electron and hole mobility in strained Si, SiGe and SiGeC are discussed and compared with predictions from simulation.

Inspec keywords: electron mobility; MIS devices; germanium compounds; silicon; hole mobility; elemental semiconductors; Ge-Si alloys; Hall mobility

Other keywords: alloy layers; electron mobility; time-of-flight method; current-voltage relation; drift mobility; MOS device; hole mobility; Hall mobility

Subjects: Electrical properties of elemental semiconductors (thin films/low-dimensional structures)

Preview this chapter:
Zoom in
Zoomout

Electronic Properties of Alloy Layers, Page 1 of 2

| /docserver/preview/fulltext/books/cs/pbcs012e/PBCS012E_ch3-1.gif /docserver/preview/fulltext/books/cs/pbcs012e/PBCS012E_ch3-2.gif

Related content

content/books/10.1049/pbcs012e_ch3
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address