Inspec keywords: semiconductor device models; leakage currents; tunnel transistors; lead compounds; surface potential; semiconductor doping; ferroelectric devices; Schottky barriers; Schottky gate field effect transistors

Other keywords: switching transitions; electric dipoles; dopant-free technique; PZT gate stack; intrinsic amplifier; PZT; ambipolar current; analogue figures-of-merit; applied gate bias; radio-frequency figures-of-merit; electrostatically-doped ferroelectric Schottky-barrier tunnel FET; negative capacitance behaviour; high frequency FOM; PZT gate-stack induced negative capacitance; dopant-free technology; charge plasma Schottky-barrier tunnel FET; ion implantation; ferroelectric Schottky-barrier tunnel field-effect transistor; ED-FE-SBTFET; thermal annealing; gate controllability; lead zirconium titanate gate stack; thermal budget; digital circuits; surface potential; ED-FE-TFET

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Semiconductor doping; Other field effect devices; Ferroelectric devices