Inspec keywords: intermodulation distortion; aluminium compounds; wide band gap semiconductors; III-V semiconductors; semiconductor device noise; gallium compounds; microwave field effect transistors; high electron mobility transistors

Other keywords: optimum low noise biases; AlGaN-GaN; applied bias dependence; linearity; gate periphery dependence; two-tone excitation; 20 GHz; low microwave noise HEMT; output third-order intercept point; 10 GHz; saturation behaviour; figure-of-merit; third-harmonic product

Subjects: Solid-state microwave circuits and devices; Other field effect devices