Inspec keywords: MOSFET; gallium arsenide; Schrodinger equation; effective mass; semiconductor device models; Poisson equation; III-V semiconductors; nanowires; Bessel functions; wave functions

Other keywords: quantum confinement; gate oxide; effective mass discontinuity; wave function; InGaAs; III–V gate all around nanowire MOSFET; self-consistent Schrodinger–Poisson solver data; sub-band energies; Bessel functions; nanowire gate; Schrodinger equation; cylindrical coordinates; semiconductor–oxide interface; compact equation

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Mathematical analysis; Insulated gate field effect transistors