Inspec keywords: copper compounds; amorphous semiconductors; germanium compounds; Peltier effect; Schottky barriers; phase change memories; contact resistance

Other keywords: thermoelectric effect; read operation; GeCu2Te3; Peltier effect; set operation; GCT material; size 500 nm; PCM device; amorphous PCM; Schottky contact; bias polarity dependence; phase change memory; nanometre scale; contact resistance; electrode; pillar structure; crystalline PCM; ohmic contact

Subjects: Semiconductor storage; Memory circuits