Inspec keywords: Ge-Si alloys; semiconductor materials; low noise amplifiers; field effect MIMIC; BiCMOS analogue integrated circuits

Other keywords: size 0.13 mum; gain-boosting technique; LNA; frequency 132 GHz to 160 GHz; silicon-germanium BiCMOS; gain 21 dB; bandwidth 28 GHz; SiGe; noise figure 8.5 dB; power 14.5 mW; 3D grounded-shielding structures; DC power consumption; silicon occupation; gain-enhanced low-noise amplifier

Subjects: CMOS integrated circuits; Mixed technology integrated circuits; Microwave integrated circuits; Amplifiers