Inspec keywords: atomic layer epitaxial growth; III-V semiconductors; buried layers; indium compounds; nanotechnology; gallium arsenide; MOSFET

Other keywords: buried-channel MOSFET; double barrier; ALD gate dielectric; transconductance; subthreshold swing; scaling property; InP-In0.52Al0.48As; In0.7Ga0.3As; epitaxial wafer; drive current

Subjects: Semiconductor doping; Insulated gate field effect transistors; Nanometre-scale semiconductor fabrication technology