Inspec keywords: MOSFET; flash memories; numerical analysis

Other keywords: split-gate flash memory cells; performance variability reduction; supply voltage fluctuation; saturation voltage; FG-MOSFET body potential; top coupling gate; nonlinear coupling voltage; floating gate coupling potential; numerical device simulation; mathematical analysis; nanoscale SG-TCG cells; source line programming voltage; potential drop; constant value; SL coupling factor; programme cell threshold voltage

Subjects: Other numerical methods; Memory circuits; Other numerical methods; Semiconductor storage; Insulated gate field effect transistors