Inspec keywords: Schottky diodes; silicon compounds; modules; insulated gate bipolar transistors; Schottky barriers; silicon; wide band gap semiconductors; semiconductor device packaging

Other keywords: half-bridge topology; diode reverse recovery loss; half-bridge IGBT power module; thermal behaviour; junction temperature rise; hybrid-style packaging structure; voltage 3.3 kV; IGBT chip; anti-parallel silicon carbide Schottky barrier diodes; current level; IGBT turn-on current overshooting; SiC; silicon carbide Schottky barrier diodes; Si; SBD chip yield; voltage level; three-phase inverter operation condition; IGBT turn-on loss; hybrid power module; hybrid insulated-gate bipolar transistor power module; power losses; current 450.0 A; silicone based fast recovery diode

Subjects: Insulated gate field effect transistors; Bipolar transistors; Junction and barrier diodes; Product packaging