Inspec keywords: indium compounds; high electron mobility transistors; III-V semiconductors; Hall effect devices; gallium arsenide; molecular beam epitaxial growth; electron mobility

Other keywords: 0.25 micron; molecular beam epitaxy; high electron mobility transistors; peak extrinsic transconductance; 115 GHz; DC performance; sheet electron density; microwave performance; 137 GHz; room-temperature Hall measurement; HEMT devices; In_0.53Ga_0.47As-InAs_0.3P_0.7

Subjects: Other field effect devices; Bulk effect devices; Vacuum deposition