Inspec keywords: semiconductor doping; elemental semiconductors; electric breakdown; silicon-on-insulator; MOSFET

Other keywords: NBL PSOI LDMOS; temperature 327 K; voltage 940 V; size 60 mum; majority carriers; linear variable doping ultrathin-PSOI LDMOS; breakdown voltage; n-type buried layer; conductivity region; power dissipation; self-heating effect; ultrathin-partial silicon-on-insulator LDMOS; n-type drift region; specific on-resistance; LVD profile

Subjects: Semiconductor doping; Insulated gate field effect transistors