Inspec keywords: metal-semiconductor-metal structures; optical fabrication; X-ray diffraction; gallium compounds; wide band gap semiconductors; dislocations; semiconductor doping; photoluminescence; III-V semiconductors; photodetectors; infrared detectors; gallium arsenide

Other keywords: photoluminescence; 1.2 mum; absorption edge; GaInNAs; 4 V; metal-semiconductor-metal near-infrared photodetectors; 0.4 mum; nitrogen incorporation effect; X-ray diffraction; GaInNAs absorption layer; dislocations

Subjects: Doping and implantation of impurities; Etch pits, decoration, transmission electron-microscopy and other direct observations of dislocations; Photodetectors; Semiconductor doping; Impurity concentration, distribution, and gradients; Detection of radiation (bolometers, photoelectric cells, i.r. and submillimetre waves detection); Metal-insulator-metal and metal-semiconductor-metal structures