Inspec keywords: indium compounds; optical fabrication; III-V semiconductors; semiconductor growth; getters; liquid phase epitaxial growth; infrared sources; photoluminescence; light emitting diodes

Other keywords: high quantum efficiency; Yb; liquid phase; InAsSb epitaxial layers; InAs_0.89 Sb_0.11 ternary material; InAsSb layers; photoluminescence intensity; LPE growth; 4.6 μm LEDs; InAs0.55Sb0.15P0.30-InAs0.89Sb0.11 -InAs0.55Sb0.15P0.30; mid-infrared LED fabrication; InAs0.55Sb0.15P0.30 InAs0.89Sb0.11/InAs.55Sb0.15P0.30 symmetrical double heterostructure LED; InAsSb; 1 mW; environmental monitoring; room temperature; rare earth element Gd; active region; non-radiative recombination centres; rare earth gettering; carrier concentration; 4.6 mum; carbon monoxide; pulsed optical output power

Subjects: Electroluminescence (condensed matter); Deposition from liquid phases (melts and solutions); Deposition from liquid phases; Light emitting diodes; Optical fabrication, surface grinding; Photoluminescence in II-VI and III-V semiconductors; Optical sources and standards; Display characteristics