Inspec keywords: annealing; antimony; doping profiles; MOSFET; interstitials; impurity distribution; ion implantation

Other keywords: short-channel lengths; submicron technology; Si:Sb; ion implantation; n-channel MOSFET; 0.1 micron; n-MOSFETs; 10 keV; channel interstitial movement reduction; impurity concentration; thermal treatment; Sb S/D implantation; 850 C; reverse-short-channel effect; NMOSFET; RSCE suppression

Subjects: Semiconductor doping; Insulated gate field effect transistors; Annealing processes in semiconductor technology