Inspec keywords: elemental semiconductors; silicon; delays; integrated circuit noise; field effect transistor circuits; SRAM chips; nanotube devices

Other keywords: symmetric drain-source-JLSiNT FET; delay performance enhancement; junctionless silicon nanotube field-effect transistor based 6T SRAM; channel regions; gate electrostatic integrity; Si; DS-JLSiNT FET; static noise margin; SNM

Subjects: Semiconductor storage; Memory circuits