Inspec keywords: III-V semiconductors; gallium compounds; switching circuits; carbon compounds; nitrogen compounds; power HEMT; power MOSFET; zero voltage switching; silicon compounds

Other keywords: gallium nitride-HEMT; voltage 600 V; switching conditions; silicon carbide power transistors; zero-voltage switching circuit; silicon carbide-MOSFET; voltage rating; voltage 1200 V; switching losses; ON-state resistance; voltage 650 V; interelectrode capacitance values; switching energy; conduction losses; turn-OFF switching losses; gallium nitride power transistors; silicon carbide power semiconductor devices; gallium nitride power semiconductor devices; soft switching mode

Subjects: Other field effect devices; II-VI and III-V semiconductors; Insulated gate field effect transistors; Power semiconductor devices; Power convertors and power supplies to apparatus