Inspec keywords: III-V semiconductors; ion implantation; indium compounds; gallium arsenide; semiconductor junction lasers; etching

Other keywords: ion implantation; current spreading limitation; room temperature CW characteristics; optical properties; In0.2Ga0.8As:F; low threshold; semiconductor lasers; shallow etched samples; deep etched samples; operating voltage-reduction; surface emitting microlasers; etch depth; F-ion implanted; electrical properties

Subjects: Lasing action in semiconductors; Surface treatment and degradation in semiconductor technology; Semiconductor lasers; Doping and implantation of impurities; Surface treatment (semiconductor technology); Semiconductor doping