Inspec keywords: semiconductor doping; MIS devices; silicon; dielectric materials; elemental semiconductors; silicon-on-insulator

Other keywords: Si; drift region; linear-variable doping interface TSL; drift concentration; voltage 5 V; thin-silicon layer; charge balance; SOI SJ high-voltage device; size 1 m; dielectric electric field; substrate-assisted depletion effect; breakdown voltage; size 30 m; silicon-on-insulator super-junction LDMOS; dielectric layer; voltage 552 V

Subjects: Semiconductor doping; Other semiconductor devices