Inspec keywords: semiconductor device reliability; tunnel transistors; silicon; elemental semiconductors; ion implantation; field effect transistors

Other keywords: gate-to-drain intrinsic resistance; higher-order transconductance; size 1 nm to 5 nm; small-signal-radiofrequency methodology; DG-metal-oxide-semiconductor FET; lateral straggle variation; reliability; RF methodology; Si; intrinsic time delay; tunnel FET; reduced off-state current; double gate TFET; lower subthreshold swing; nonquasistatic RF bias-dependent parameter; RF intrinsic parameter performance; NQS parameter; ion implantation process; tilt angle variation; intrinsic capacitance; tunnel field-effect transistor

Subjects: Reliability; Semiconductor doping; Other field effect devices