Inspec keywords: aluminium compounds; semiconductor growth; III-V semiconductors; p-n heterojunctions; gallium arsenide; semiconductor epitaxial layers; vapour phase epitaxial growth; indium compounds; semiconductor doping; high electron mobility transistors

Other keywords: 1.5 μm gate length; VPE; MODFET; 302 mS/mm transconductance; selectively doped heterostructures; AlInAs/GaInAs; heterointerface FETs; AlInAs-GaInAs; high electron mobility transistors; HIFET; HEMT; MOCVD growth; III-V semiconductors

Subjects: Thin film growth, structure, and epitaxy; Semiconductor doping; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Other field effect devices; II-VI and III-V semiconductors; Epitaxial growth; Chemical vapour deposition; Semiconductor junctions