Inspec keywords: diffusion; elemental semiconductors; arsenic; secondary ion mass spectra; semiconductor doping; thermal management (packaging); annealing; hole density; germanium; mass spectroscopy; vacancies (crystal); boron; rapid thermal annealing

Other keywords: hole density; Ge substrate; negatively charged vacancies; chemical profiles; activation energy; temperature 600 degC to 750 degC; rapid thermal annealing; high boron background doping; dopant-vacancy pairs; As implantation; diffusion vehicles; boron-doped germanium; secondary ion mass spectroscopy; arsenic diffusion dependence; Ge:B,As; As+V0 pairs

Subjects: Annealing processes; Atom-, molecule-, and ion-surface impact and interactions; Mass spectrometry (chemical analysis); Doping and implantation of impurities; Diffusion, migration, and displacement of impurities in solids; Elemental semiconductors; Semiconductor doping; Interstitials and vacancies; Annealing processes in semiconductor technology