Inspec keywords: content-addressable storage; random-access storage; CMOS digital integrated circuits

Other keywords: nonvolatile ternary content-addressable-memory; resistance ratio; voltage limiter; CMOS process; sensing margin; 3T-2R nvTCAM; self-controlled bias circuit; match line development; size 65 nm; sensing delay

Subjects: Memory circuits; Semiconductor storage; CMOS integrated circuits; Associative storage