Inspec keywords: heterojunction bipolar transistors; III-V semiconductors; carbon; gallium arsenide; indium compounds; heavily doped semiconductors; semiconductor growth; chemical beam epitaxial growth; semiconductor doping

Other keywords: highly doped base; breakdown voltage; current gain; 6 V; Gummel plot; ideal I-V characteristics; hole concentration; doping level; HBTs; base current ideality factor; heterojunction bipolar transistors; chemical beam epitaxy; InP-In_0.53Ga_0.47As:C; collector current ideality factor

Subjects: Semiconductor doping; Epitaxial growth; Bipolar transistors