Inspec keywords: carrier lifetime; power MOSFET; hydrogen; wide band gap semiconductors; power semiconductor switches; silicon compounds; Schottky diodes; ionisation; radiation hardening (electronics)

Other keywords: forward voltage drop; displacement damage; radiation defects; acceptor traps; shorter carrier diffusion lengths; bipolar devices; power transistors; degradation mechanisms; conductivity modulation; high-energy particles; radiation-resistant silicon carbide power devices; total ionisation dose effects; charge sensitive oxide layer; JFET; device characteristics; blocking characteristics; forward voltage; metal–oxide–semiconductor field-effect transistors; lightly doped drift regions; carrier mobility; unipolar devices; junction barrier Schottky diode; H-SiC; power diodes

Subjects: Relays and switches; Insulated gate field effect transistors; Junction and barrier diodes; Power semiconductor devices; Radiation effects (semiconductor technology)