Inspec keywords: SRAM chips; power aware computing; integrated circuit design; resistive RAM; carbon nanotube field effect transistors; memristor circuits; field effect transistor circuits

Other keywords: read delay variability; voltage 1.0 V; variability-aware nonvolatile resistive random access memory cell; narrower read delay variability; CNFET; power-aware non-volatile resistive random access memory cell; memristor-based RRAM design; conventional 6T static random access memory-2T2M RRAM cell; process variation; 5CNFET2M; hold power variability; memory element; carbon nanotube field-effect transistor; standard 6T SRAM cell

Subjects: Environmental aspects of computing; Digital circuit design, modelling and testing; Semiconductor integrated circuit design, layout, modelling and testing; Semiconductor storage; Memory circuits; Electrical/electronic equipment (energy utilisation)