Inspec keywords: electrical resistivity; annealing; ion beam effects; ion implantation; wide band gap semiconductors; silicon compounds

Other keywords: isochronal heat treatments; Si ion implantation; 600 to 1200 C; thermal atom redistribution; lattice damage; compensation; SiC; 6H SiC; 0.4 to 3.0 MeV; semi-insulating layers; C ion implantation; temperature dependent resistivity measurements; 4H SiC; 0.5 to 4.5 MeV; annealing temperature

Subjects: Ion beam effects; Semiconductor doping; Electrical conductivity of other crystalline inorganic semiconductors; Doping and implantation of impurities; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Other semiconductor materials; Annealing processes; Annealing processes in semiconductor technology