Inspec keywords: elemental semiconductors; semiconductor doping; semiconductor device breakdown; gallium compounds; capacitance; aluminium compounds; silicon; high electron mobility transistors; electrodes; III-V semiconductors; two-dimensional electron gas

Other keywords: HEMT structure; 2DEG; Al_0.25Ga_0.75N:Si-GaN-AlN; high electron mobility transistors; voltage 308 V; breakdown voltage; drain electrodes; partial silicon doping; voltage 400 V; electric field modulation effect; gate; adding capacitance; two-dimensional electron gas; surface electric field

Subjects: Elemental semiconductors; Other field effect devices; II-VI and III-V semiconductors; Semiconductor doping; Semiconductor junctions and interfaces