Inspec keywords: carrier mobility; semiconductor doping; III-V semiconductors; chemical beam epitaxial growth; gallium compounds; passivation; annealing; electronic conduction in crystalline semiconductor thin films; semiconductor growth; carbon; semiconductor epitaxial layers

Other keywords: MOMBE; metal organic MBE; H₂ plasma exposed GaN; vapour phase growth; GaN:C-GaAs; III-V nitrides; molecular beam epitaxy; dopant passivation; electrical passivation; GaAs substrates; H₂; GaAs; 2.45 GHz; annealing; GaN; 250 to 450 C; lightly p-doped semiconductor; residual acceptors deactivation; microwave plasma; H₂ carrier gases

Subjects: Electronic properties of semiconductor thin films; Epitaxial growth; Electrical conductivity of II-VI and III-V semiconductors; Semiconductor doping; Low-field transport and mobility; piezoresistance (semiconductors/insulators); II-VI and III-V semiconductors; Thin film growth, structure, and epitaxy; Doping and implantation of impurities; Vacuum deposition; Annealing processes; Surface treatment (semiconductor technology)