Inspec keywords: intermodulation distortion; wide band gap semiconductors; ferroelectric devices; high electron mobility transistors; MOSFET; III-V semiconductors; gallium compounds

Other keywords: harmonic balance simulation; radiofrequency front end receiver; DC characteristics; input gain compression point; E-mode ferroelectric MOS-HEMT; enhancement mode dual gate ferroelectric gallium nitride metal oxide semiconductor-high electron mobility transistor; linearity improvement; single gate un-recessed ferroelectric MOS-HEMT; GaN; technology computer-aided device simulation; small signal parameters; input third-order intercept point; dual gate device; carrier to intermodulation power ratio; transconductance distribution; improved linearity performance; look up table-based large signal models; enhanced linearity characteristics; gate voltage; dual gate technology; third-order intermodulation

Subjects: Insulated gate field effect transistors; Ferroelectric devices