IEE Proceedings - Optoelectronics

IEE Proceedings - Optoelectronics

Online ISSN 1359-7078
Print ISSN 1350-2433

Published from 1994-2006, IEE Proceedings - Optoelectronics contained significant and original contributions on optoelectronics, including: optical and optoelectronic materials; light sources; optical modulation and multiplexing; optical fibres, cables and connectors; optical amplifiers; photodetectors and optical receivers; photonic integrated circuits; nanophotonics and photonic crystals; optical signal processing; holography; and displays.

This journal was previously known as IEE Proceedings J (Optoelectronics) 1985-1993. ISSN 0267-3932. more..

This publication is continued by IET Optoelectronics 2007-. ISSN 1751-8768. more..

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Editorial: Semiconductor and Integrated Optoelectronics (SIOE) Conference 2006
- Author(s): P. Smowton
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- p. 275 (1)
AlGaInAs selective area growth by LP-MOVPE: experimental characterisation and predictive modelling
- Author(s): N. Dupuis ; J. Decobert ; P.Y. Lagrée ; N. Lagay ; C. Cuisin ; F. Poingt ; A. Ramdane ; C. Kazmierski
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- p. 276 –279 (4)
  Thickness and composition profiles of AlGaInAs-based layers grown by low-pressure metal organic vapour phase epitaxy in the regime of selective area growth (SAG) have been modelled and measured experimentally. Experimental thickness profiles of InP, GaAs and GaAlAs bulk layers grown in the SAG regime have been precisely fitted with a three-dimensional vapour phase-diffusion model, and the characteristic diffusion length coefficient (D/k) for In, Ga and Al extracted. The D/k diffusion parameter for aluminium has been calculated and found intermediate between the indium and gallium ones. The diffusion model predict both thickness and compositional variations of AlGaInAs layers selectively grown for different mask patterns. The excellent agreement obtained between calculated and measured profiles makes this modelling tool essential for engineering of future SAG integrated optical devices.
High-performance 1.3 µm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature
- Author(s): C.Y. Jin ; H.Y. Liu ; T.J. Badcock ; K.M. Groom ; M. Gutiérrez ; R. Royce ; M. Hopkinson ; D.J. Mowbray
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- p. 280 –283 (4)
  A high-growth-temperature GaAs spacer layer (HGTSL) is shown to significantly improve the performance of 1.3 µm multilayer InAs/GaAs quantum-dot (QD) lasers. The HGTSL inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics and hence improved performance of QD lasers. To further reduce the threshold current density and improve the room-temperature characteristic temperature (T₀), the high-reflection (HR) coating and p-type modulation doping have been incorporated with the HGTSL technique. A very low continuous-wave room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A cm⁻² are achieved for a three-layer device with a 1 mm HR/HR cavity, while a very low threshold current density of 48 A cm⁻² and a negative T₀ are achieved in the p-doped lasers.
Optimum modulation frequency for FM seeded FSF laser ranging
- Author(s): K.A. Shore and D.M. Kane
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- p. 284 –286 (3)
  A direct means for determining the optimum frequency modulation frequency for enhanced frequency-shifted feedback laser ranging is reported.
Thermal effects in InGaAs/AlAsSb quantum-cascade lasers
- Author(s): C.A. Evans ; V.D. Jovanović ; D. Indjin ; Z. Ikonić ; P. Harrison
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- p. 287 –292 (6)
  A quantum-cascade laser (QCL) thermal model is presented. On the basis of a finite-difference approach, the model is used in conjunction with a self-consistent carrier transport model to calculate the temperature distribution in a near-infrared InGaAs/AlAsSb QCL. The presented model is used to investigate the effects of driving conditions and device geometries on the active-region temperature, which has a major influence on the device performance. A buried heterostructure combined with epilayer-down mounting is found to offer the best performance compared with alternative structures and has thermal time constants up to eight times smaller. The presented model provides a valuable tool for understanding the thermal dynamics inside a QCL and will help to improve operating temperatures.

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IEE Proceedings - Optoelectronics

Volumes & issues:

Volume 153 (2006)

Volume 152 (2005)

Volume 151 (2004)

Volume 150 (2003)

Volume 149 (2002)

Volume 148 (2001)

Volume 147 (2000)

Volume 146 (1999)

Volume 145 (1998)

Volume 144 (1997)

Volume 143 (1996)

Volume 142 (1995)

Volume 141 (1994)

Latest content

Editorial: Semiconductor and Integrated Optoelectronics (SIOE) Conference 2006

AlGaInAs selective area growth by LP-MOVPE: experimental characterisation and predictive modelling

High-performance 1.3 µm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

Optimum modulation frequency for FM seeded FSF laser ranging

Thermal effects in InGaAs/AlAsSb quantum-cascade lasers

Most viewed content for this Journal

Most cited content for this Journal