IEE Proceedings - Circuits, Devices and Systems
Volume 149, Issue 1, February 2002
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Volume 149, Issue 1
February 2002
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- Author(s): Safa Kasap and M. Jamal Deen
- Source: IEE Proceedings - Circuits, Devices and Systems, Volume 149, Issue 1, p. 1 –2
- DOI: 10.1049/ip-cds:20020162
- Type: Article
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- Author(s): L.K.J. Vandamme and Gy. Trefán
- Source: IEE Proceedings - Circuits, Devices and Systems, Volume 149, Issue 1, p. 3 –12
- DOI: 10.1049/ip-cds:20020329
- Type: Article
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Some experimental techniques for low-frequency resistance noise measurements are discussed. The criterion for using a low-noise current amplifier instead of voltage amplifier is given. A distinction is made between contact and bulk resistance contributions to the observed 1/f noise. The merits and difficulties of the application of the empirical relation for the 1/f noise in homogeneous and inhomogeneous media are addressed. The criterion that 1/f noise in homogeneous samples can only be detected for a number of free carriers N < 1014 is calculated. The authors explain why the enhanced l/f noise, due to poor crystal quality, current crowding at contacts or at grain boundaries, and at inhomogeneous internal interfaces can be used as a diagnostic tool for quality and reliability assessment of electronic devices. - Author(s): B.K. Jones
- Source: IEE Proceedings - Circuits, Devices and Systems, Volume 149, Issue 1, p. 13 –22
- DOI: 10.1049/ip-cds:20020331
- Type: Article
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Low-frequency electrical noise is well accepted as a very sensitive measure of the quality and reliability of electrical components and electronic devices. It shows changes in magnitude very much greater than in the static electrical properties. The excess noise is due to defects and non-ideality in the device. Although the excess noise is a general indicator of quality there can be many physical processes that could be involved. These noise contributions are additive and therefore not easy to distinguish so that the noise is not so valuable as a diagnostic tool. Also, there is not a detailed understanding of some noise sources, such as in some semiconductor devices. Recently devices have continued to become smaller in size so that the noise signal has become more significant compared to the real signal and the number of individual defects involved has become fewer. This has resulted in a growing trend to the study of the time varying signal rather than the noise spectral density. A review is given of the developments in the subject over the last few years. - Author(s): Z. Çelik-Butler
- Source: IEE Proceedings - Circuits, Devices and Systems, Volume 149, Issue 1, p. 23 –31
- DOI: 10.1049/ip-cds:20020332
- Type: Article
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The author reviews the recent results obtained on the low-frequency noise characteristics of deep-submicron metal–oxide–semiconductor field-effect transistors (MOSFETs). The manuscript covers measurements, analysis and modelling of 1/f noise as well as random telegraph signals (RTS). In addition, techniques are presented where RTS and 1/f noise measurements can be utilised to characterise the oxide traps responsible for these fluctuations, namely the position of the trap in the oxide and along the conduction channel, the trap energy, and the associated screened scattering coefficient. Most of the analysis is based on the classical three-dimensional treatment of charge carrier calculation, although a section is reserved for charge quantisation and its effect on RTS. For noise modelling, an improved physics-based 1/f noise model is presented where the Berkeley short channel IGFET model (BSIM3) has been modified to include the threshold variation along the channel. This model merges into the classical BSIM3 for supermicron devices. The noise models presented in the manuscript are based on data that were obtained on many submicron channel length n- and p- MOSFETs made by different leading manufacturers using different technologies. It is expected that the developed models will be valid for all advanced MOSFETs. - Author(s): M.E. Levinshtein ; S.L. Rumyantsev ; M.S. Shur ; R. Gaska ; M.A. Khan
- Source: IEE Proceedings - Circuits, Devices and Systems, Volume 149, Issue 1, p. 32 –39
- DOI: 10.1049/ip-cds:20020328
- Type: Article
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The results of experimental and theoretical studies of low-frequency noise in wide-band-gap semiconductors and wide-band-gap semiconductor devices are reviewed. The unusual features of the low-frequency noise in these systems include an extremely low level of noise in SiC and SiC-based devices and a large difference in the noise level in GaN-based films and GaN-based field effect transistors (FETs) (with the noise being much smaller in GaN-based FETs). The authors also report on the generation–recombination noise in SiC and GaN-based materials and devices. - Author(s): M.J. Deen and E. Simoen
- Source: IEE Proceedings - Circuits, Devices and Systems, Volume 149, Issue 1, p. 40 –50
- DOI: 10.1049/ip-cds:20020076
- Type: Article
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The authors present a review of low-frequency noise (LFN) in polysilicon-emitter (PE) bipolar junction transistors (BJTs). It includes noise results from unstressed as well as stressed devices. A discussion of the possible physical origins of low-frequency noise is presented. Details of noise measurement and a simple noise equivalent circuit, with related noise spectral-density expressions, are given. The first part of the paper deals with noise in virgin or unstressed devices. It starts with a detailed discussion of low-frequency noise results in virgin devices. This includes noise in ultra-small transistors and a discussion of the possible physical origin(s) of the noise. Low-frequency noise in npn and pnp transistors and a technique to estimate the collector 1/f noise are then presented. Since devices are scaled to achieve better high-frequency performance, a discussion of low-frequency noise as a function of emitter geometry for transistors from several different technologies is presented. The second part of the paper deals with degradation of the LFN performance due to electrical stress. It begins with a discussion of degradation mechanisms, followed by a phenomenological discussion of low-frequency noise after hot-carrier (HC) stress. A discussion of the modelling of low-frequency noise after hot-carrier degradation due to reverse current or reverse bias voltage stresses is presented. The effects of forward bias degradation on the low-frequency noise in BJTs are presented and discussed. Finally, it is demonstrated that the noise in PE-BJTs is more sensitive to degradation than the DC characteristics. - Author(s): J. A. Chroboczek ; J. A. Chroboczek ; G. Ghibaudo
- Source: IEE Proceedings - Circuits, Devices and Systems, Volume 149, Issue 1, p. 51 –58
- DOI: 10.1049/ip-cds:20020320
- Type: Article
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It is shown that low-frequency noise (LFN) in SiGe-base HBTs and SiGe-channel pMOSFETs can be made significantly lower than it is in their all-Si counterparts. The noise reduction in the HBTs results principally from the elimination of the emitter/base interfacial oxide, which, in the Si bipolar junction transistors, serves to boost the current gain. A reduction in the LFN in the SiGe channel pMOSFETs is also possible, but requires a careful design of the structure, as the power spectral density (PSD) of drain current fluctuations is often a non-monotonic function of their structure parameters. Optimisation of the LFN requires a simulation of the PSD. This can be done using an analytical model assuming (i) carrier-number fluctuation noise generation by trapping/release of charges at the SiO2/Si interface, resulting in correlated fluctuations in the retrograded SiGe channel and in the SiO2/Si interface channel, and (ii) mobility fluctuations in each channel. The quality of the SiO2/Si interface is crucial for the overall LFN properties of the MOSFETs, as it is responsible for the number fluctuation noise which is predominant in the range of currents commonly used. - Author(s): A. Pénarier ; S.G. Jarrix ; C. Delseny ; F. Pascal ; J.C. Vildeuil ; M. Valenza ; D. Rigaud
- Source: IEE Proceedings - Circuits, Devices and Systems, Volume 149, Issue 1, p. 59 –67
- DOI: 10.1049/ip-cds:20020330
- Type: Article
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Low-frequency noise results obtained for III–V pseudomorphic high electron mobility transistors (PHEMTs) and heterojunction bipolar transistors (HBTs) are reviewed. The experimental noise set-up is presented and the equivalent circuits of devices including noise sources are established. Excess low-frequency noise comprises 1/f and Lorentzian-type components. An overview of gate and drain low-frequency noise of heterostructure field-effect transistors is provided in the paper. Different activation energy values attributed to traps are also reported. The authors concentrate on the l/f noise of GaAs-based PHEMTs. The results are analysed with the help of an equivalent circuit deduced from a study of the conduction. The fundamental 1/f noise sources are analysed and modelled according to the different bias range. With regard to HBTs, results for AlGaAs/GaAs, GaInP/GaAs and InP/InGaAs are used for comparison. The effect of the DX centre on the different materials is investigated. The analysis against the bias of the 1/f noise level of the current spectral density referred to the input Sin gives information on the origin of the noise. The experimental bias dependencies of Sin are compared to those available in the literature and are discussed. The importance of electrical passivation for the improvement of noise is investigated. An analysis of noise against emitter area and emitter perimeter is undertaken for an accurate location of noise sources. - Author(s): R.E. Johanson ; M. Günes ; S.O. Kasap
- Source: IEE Proceedings - Circuits, Devices and Systems, Volume 149, Issue 1, p. 68 –74
- DOI: 10.1049/ip-cds:20020333
- Type: Article
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Published work on conductance fluctuations in hydrogenated amorphous silicon is surveyed. There are many reports of 1/f noise, some describing unusual features such as non-Gaussian statistics. The relative insensitivity to doping and temperature is highlighted. In addition to the 1/f noise, random-telegraph-like noise is often reported. The successes and failures of generation–recombination models for 1/f noise and current filament models for the telegraph noise are summarised. - Author(s): D. Rigaud ; M. Valenza ; J. Rhayem
- Source: IEE Proceedings - Circuits, Devices and Systems, Volume 149, Issue 1, p. 75 –82
- DOI: 10.1049/ip-cds:20020063
- Type: Article
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Works concerning low frequency noise in thin film transistors are reviewed and significant results reported. To offer relevant noise analysis, some considerations on the electrical conduction in thin film transistors are presented. Based on these considerations, models generally used to describe low frequency noise in thin film transistors are given. They stem from those developed for 1/f noise in metal-oxide-semiconductor field-effect transistors and they have been adapted to take into account the effects of the nonhomogeneous conducting channel. Amorphous silicon and polycrystalline silicon active thin film especially are considered. For these two kinds of materials, an analysis of the experimental noise measurements obtained by several authors is presented with their theoretical explanations. Results of investigations on the nonhomogeneous active film deduced from noise measurements are also reported. Finally, particular noise aspects in thin film transistors are studied such as the noise associated with access resistances in inverted staggered structures or the possibility to apply the BSIM (Berkeley short channel insulated gate field-effect transistors model) for 1/f noise modelling in thin film transistors.
Editorial: Selected topics on electronic noise
1/f noise in homogeneous and inhomogeneous media
Electrical noise as a reliability indicator in electronic devices and components
Low-frequency noise in deep-submicron metal–oxide–semiconductor field-effect transistors
Low frequency and 1/f noise in wide-gap semiconductors: silicon carbide and gallium nitride
Low-frequency noise in polysilicon-emitter bipolar transistors
Has SiGe lowered the noise in transistors?
Low-frequency noise in III–V high-speed devices
Noise in hydrogenated amorphous silicon
Low frequency noise in thin film transistors
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