Online ISSN
1751-8776
Print ISSN
1751-8768
IET Optoelectronics
Volume 5, Issue 5, October 2011
Volumes & issues:
Volume 5, Issue 5
October 2011
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- Author(s): K. Williams
- Source: IET Optoelectronics, Volume 5, Issue 5, p. 185 –186
- DOI: 10.1049/iet-opt.2011.0067
- Type: Article
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185
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- Author(s): M. Smit ; X. Leijtens ; E. Bente ; J. Van der Tol ; H. Ambrosius ; D. Robbins ; M. Wale ; N. Grote ; M. Schell
- Source: IET Optoelectronics, Volume 5, Issue 5, p. 187 –194
- DOI: 10.1049/iet-opt.2010.0068
- Type: Article
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p.
187
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Similarities and differences between photonic and microelectronic integration technology are discussed and a vision of the development of InP-based photonic integration in the coming decade is given. - Author(s): G. Carpintero ; M.G. Thompson ; K. Yvind ; R.V. Penty ; I.H. White
- Source: IET Optoelectronics, Volume 5, Issue 5, p. 195 –201
- DOI: 10.1049/iet-opt.2010.0058
- Type: Article
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p.
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Mode-locked lasers are commonly used in carrier-wave signal generation systems because of their excellent phase noise performance. Owing to the importance of this key parameter, this study presents a like-for-like comparison of the noise performance of the passive mode-locked regime of two devices fabricated with different material gain systems, one quantum well and the other quantum dot (QD), both with a monolithic all-active two-section mode-locked structure. Two important factors are identified as having a significant effect on the noise performance, the RF linewidth of the first harmonic and the shape of the noise pedestals, both depending on the passive mode-locked bias conditions. Nevertheless, the dominant contribution of the RF linewidth to the phase noise, which is significantly narrower for the QD laser, makes this material more suitable for optical generation of low-noise millimetre-wave carrier frequencies. - Author(s): X. Leijtens
- Source: IET Optoelectronics, Volume 5, Issue 5, p. 202 –206
- DOI: 10.1049/iet-opt.2010.0070
- Type: Article
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Jeppix is the European platform that is aiming to offer access to Indium Phosphide-based technology for manufacturing of photonic integrated circuits. This is enabled by using a generic integration technology. The authors outline the current status and developments. - Author(s): P. Muñoz ; R. García-Olcina ; C. Habib ; L.R. Chen ; X.J.M. Leijtens ; J.D. Doménech ; M. Rius ; J. Capmany ; T. de Vries ; M.J.R. Heck ; L. Augustin ; R. Notzel ; D. Robbins
- Source: IET Optoelectronics, Volume 5, Issue 5, p. 207 –210
- DOI: 10.1049/iet-opt.2010.0066
- Type: Article
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p.
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In this study, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors (SLRs), with an arrayed waveguide grating (AWG) as frequency-selective device, and semiconductor optical amplifiers as gain sections. The power is out coupled from the cavity using a side diffraction order of the AWG. Simultaneous laser operation is provided for four wavelengths/cavities in the device. The termination of the laser cavities with integrated SLRs avoids using high-reflection coating. Only anti-reflection coating is used in the output facet of the chip. - Author(s): M. Kroh ; L. Zimmermann ; H-G. Bach ; K. Voigt ; A. Beling ; M.L. Nielsen ; R. Ludwig ; J. Bruns ; G. Unterbörsch
- Source: IET Optoelectronics, Volume 5, Issue 5, p. 211 –217
- DOI: 10.1049/iet-opt.2010.0059
- Type: Article
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211
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Advanced modulation formats such as phase-coded modulation require the deployment of more complex receiver configurations. Waveguide-integrated silicon-on-insulator boards provide versatile optical functions for compact differential phase shift keying and quaternary phase shift keying receivers. - Author(s): J. van der Tol ; R. Zhang ; J. Pello ; F. Bordas ; G. Roelkens ; H. Ambrosius ; P. Thijs ; F. Karouta ; M. Smit
- Source: IET Optoelectronics, Volume 5, Issue 5, p. 218 –225
- DOI: 10.1049/iet-opt.2010.0056
- Type: Article
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A new photonic integration technique is presented, which enables the use of indium-phosphide-based membranes on top of silicon chips. This can provide the electronic chips (complementary metal-oxide semiconductor (CMOS)) with an added optical layer (indium-phosphide membrane on silicon (IMOS)) for resolving the communication bottleneck. Very small passive devices have been realised, with performances comparable to other membrane devices (propagation loss 7 dB/cm, negligible bending loss for micron size radii, 3 dB splitter with 0.6 dB excess loss, resonator with Q-factor of 15.500). Also, a new passive device is introduced, a 4.12 micron long polarisation converter which in simulations promises broadband performance and tolerant fabrication. Finally, an active/passive regrowth technique is investigated for submicron active regions within an otherwise mostly passive membrane. A good morphology is obtained around the interfaces between the active and passive regions. The processing involved did not damage the materials severely, so that light emission in micro-PL measurements was found. However, an increasing blue shift with decreasing size occurred, due to quantum well intermixing. Optimising the design and the processing can take care of this. Taken together, the results presented here show that it is feasible to realise extremely small passive and active devices in a photonic circuit in an InP membrane. - Author(s): Z. Zhang ; N. Mettbach ; C. Zawadzki ; J. Wang ; D. Schmidt ; W. Brinker ; N. Grote ; M. Schell ; N. Keil
- Source: IET Optoelectronics, Volume 5, Issue 5, p. 226 –232
- DOI: 10.1049/iet-opt.2010.0054
- Type: Article
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The authors showcase their polymer-based photonic toolbox with various functionalities, which can be chosen, manipulated and combined. In the category of passive components, low-loss planar waveguides, on-chip fibre grooves and integrated thin film elements can be applied for wave guiding/splitting, multiplexing etc. In particular, on-chip grooves provide secure and automatable fibre attachment with coupling loss less than 0.2 dB per facet. The toolbox also features solutions for hybrid integration with active components. Four-channel detector arrays, for example, for IEEE 100 GbE applications, with 3 dB bandwidth exceeding 25 GHz have been demonstrated. An inserted half-wave plate, together with micro-heaters can eliminate the polarisation-dependent frequency shift in a delay line interferometer, for example, for differential phase shift keying and differential quadrature phase shift keying receiver.
Editorial: Selected papers from the European Conference on Integrated Optoelectronics (ECIO '10)
Generic foundry model for InP-based photonics
Comparison of the noise performance of 10 GHz repetition rate quantum-dot and quantum well monolithic mode-locked semiconductor lasers
JePPIX: the platform for Indium Phosphide-based photonics
Sagnac loop reflector and arrayed waveguide grating-based multi-wavelength laser monolithically integrated on InP
Integrated receivers on silicon-on-insulator for advanced modulation formats
Photonic integration in indium-phosphide membranes on silicon
Polymer-based photonic toolbox: passive components, hybrid integration and polarisation control
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