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Online ISSN 1751-8598 Print ISSN 1751-858X

IET Circuits, Devices & Systems

Volume 8, Issue 3, May 2014

Volume 8, Issue 3

May 2014

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    • Editorial: Construction and technology of power semiconductor devices
      Future trends in high-power bipolar metal-oxide semi-conductor controlled power semi-conductors
      Reverse conducting–IGBTs initial snapback phenomenon and its analytical modelling
      Optimisation of the reverse conducting IGBT for zero-voltage switching applications such as induction cookers
      3.3 kV PT-IGBT with voltage-sensor monolithically integrated
      VDMOS electrical parameters potentially usable as mechanical state indicators for power VDMOS assemblies
      Analysis study of sensitive volume and triggering criteria of single-event burnout in super-junction metal-oxide semiconductor field-effect transistors
      Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept
      Influence of surface states on the reverse and noise properties of silicon power diodes
      Parameters influencing the maximum controllable current in gate commutated thyristors
      SiC and GaN devices – wide bandgap is not all the same

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