Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 9, Issue 25, 13 December 1973
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Volume 9, Issue 25
13 December 1973
GaAs field-effect transistors with ion-implanted channels
- Author(s): R.G. Hunsperger and N. Hirsch
- Source: Electronics Letters, Volume 9, Issue 25, p. 577 –578
- DOI: 10.1049/el:19730427
- Type: Article
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p.
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–578
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Schottky-barrier-gate n channel depletion-mode field-effect transistors have been fabricated in GaAs by the use of sulphurion implantation directly into semi-insulating Cr-doped substrates to produce the channel. This technique eliminates the need for the growth of a thin epitaxial layer, as is usually done, and results in better uniformity of device characteristics over the wafer area. Performance of these devices at 1 to 12 GHz is described, and low-frequency characteristics are given.
F.M.-noise measurements on p-type and n-type silicon IMPATT oscillators
- Author(s): G.A. Swartz ; Y.S. Chiang ; C.P. Wen ; A. Young
- Source: Electronics Letters, Volume 9, Issue 25, p. 578 –580
- DOI: 10.1049/el:19730428
- Type: Article
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p.
578
–580
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F.M.-noise measurements on p-type, step-abrupt n-type and uniformly doped n-type silicon IMPATT-diode oscillators show the correlation between the width of the avalanche zone and f.m. noise. A reduction in the f.m.-noise parameter and an increase in the d.c.-to-r.f.-conversion efficiency have been observed for IMPATT devices with a thinner effective avalanche zone.
Binary read-only-memory multiplier
- Author(s): Chang Tien-Lin
- Source: Electronics Letters, Volume 9, Issue 25, p. 580 –581
- DOI: 10.1049/el:19730429
- Type: Article
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p.
580
–581
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A new structure for a multiplier employing a read-only memory (r.o.m.) lookup table is proposed. The multiplier is capable of operation at high speeds, with high accuracy.
Low-noise room-temperature parametric amplifier
- Author(s): P.K. Lau and P.A. Watson
- Source: Electronics Letters, Volume 9, Issue 25, p. 581 –582
- DOI: 10.1049/el:19730430
- Type: Article
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p.
581
–582
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The use of the phase-locked degenerate parametric amplifier in digitally modulated communication systems has been proposed. In the letter, we report successful operation of this device as an amplifier for high-speed phase-shift-keyed signals. Noise temperature measured on a 4 GHz device by a system (error-rate) measurement and by a Y factor method give a noise temperature of 46 K, including 11 deg K from the circulator, with the amplifier at room temperature.
Suppression of 3rd-order truncation error in linear digital differential analysers
- Author(s): P.W. Baker
- Source: Electronics Letters, Volume 9, Issue 25, p. 582 –583
- DOI: 10.1049/el:19730431
- Type: Article
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p.
582
–583
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The letter develops modified register-transfer equations for Euler's and Adam's method that suppress higher-order errors due to finite register lengths in linear digital differential analysers.
Propagation of an impulsive plane wave with arbitrary angle of incidence and polarisation in isotropic-plasma halfspace
- Author(s): B.V. Štanić and M.M. Škorić
- Source: Electronics Letters, Volume 9, Issue 25, p. 583 –585
- DOI: 10.1049/el:19730432
- Type: Article
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583
–585
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The time-dependent transmitted waveforms for an impulsive plane wave obliquely incident on an isotropic cold lossless-plasma halfspace are obtained in closed form by the use of an inverse Fourier transform of the known steady-state solution. The numerical results are plotted for both TE and TM polarisation for different angles of incidence.
Generalised Cockcroft-Walton voltage multipliers
- Author(s): A.H. Falkner
- Source: Electronics Letters, Volume 9, Issue 25, p. 585 –586
- DOI: 10.1049/el:19730433
- Type: Article
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p.
585
–586
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The letter suggests how a Cockroft-Walton voltage multiplier can be generalised to be driven by multiphase square waves.
Punchthrough currents in short-channel m.o.s.t. devices
- Author(s): R.A. Stuart and W. Eccleston
- Source: Electronics Letters, Volume 9, Issue 25, p. 586 –587
- DOI: 10.1049/el:19730434
- Type: Article
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p.
586
–587
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Measurements have been performed on the source-leakage currents associated with short-channel m.o.s.t. devices. Both space-charge-limited and non-space-charge-limited punchthrough currents have been observed as a function of gate and drain voltages, and physical mechanisms describing these currents are briefly discussed.
Bucket-brigade device with improved charge transfer
- Author(s): W. Frey
- Source: Electronics Letters, Volume 9, Issue 25, p. 588 –589
- DOI: 10.1049/el:19730435
- Type: Article
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p.
588
–589
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The charge transfer of bucket-brigade devices can be considerably improved by the additional use of one transistor and one resistor per cell. The effect of this is demonstrated by a computer simulation.
Resonant-grid quasioptical diplexer
- Author(s): J.A. Arnaud
- Source: Electronics Letters, Volume 9, Issue 25, p. 589 –590
- DOI: 10.1049/el:19730436
- Type: Article
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p.
589
–590
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Measurements on a polarisation independent-resonant-grid diplexer are described. The grid transmits the 13·5 to 19 GHz band (loss < 1 dB). It reflects the 23 to 36 GHz band (loss < 1 dB) at an angle of 40° to the incident beam. Peak rejections exceed 44dB. Crosspolarised components are below 30dB.
Evaluation of attenuation from lossless triangular-finite-element solutions for inhomogeneously filled guiding structures
- Author(s): T.S. Bird
- Source: Electronics Letters, Volume 9, Issue 25, p. 590 –592
- DOI: 10.1049/el:19730437
- Type: Article
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p.
590
–592
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The numerical evaluation of attenuation from lossless triangular-finite-element solutions for inhomogeneously filled guiding structures is expressed in a convenient computational form. Results obtained for a dielectric-loaded waveguide are found to be highly accurate. The application of the new form to structures containing re-entrant corners is also discussed.
Two-frequency secondary radar incorporating passive transponders
- Author(s): D.E.N. Davies and H. Makridis
- Source: Electronics Letters, Volume 9, Issue 25, p. 592 –593
- DOI: 10.1049/el:19730438
- Type: Article
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p.
592
–593
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A radar technique incorporating a simultaneous transmission on different frequencies is described. It is used with passive transponders employing nonlinear diodes that mix the two carrier frequencies and use one of the intermodulation frequencies to generate a reply from the transponder.
V.M.O.S. conductively coupled charge-coupled device
- Author(s): C.M. Parks and C.A.T. Salama
- Source: Electronics Letters, Volume 9, Issue 25, p. 593 –594
- DOI: 10.1049/el:19730439
- Type: Article
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p.
593
–594
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A new conductively coupled stepped-oxide 2-phase charge-coupled-device structure is proposed, fabricated and tested. The structure has a narrow automatically produced oxide barrier, and allows increased packing density for charge-coupled-device arrays.
Numerical calculation of the ideal c/v characteristics of nonuniformly doped m.o.s. capacitors
- Author(s): H. El-Sissi and R.S.C. Cobbold
- Source: Electronics Letters, Volume 9, Issue 25, p. 594 –596
- DOI: 10.1049/el:19730440
- Type: Article
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p.
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–596
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A new and highly efficient method for calculating the ideal C/V characteristics of nonuniformly doped m.o.s. capacitors is described. Compared with previously described procedures, this method decreases the computation time by more than an order of magnitude. Results for an ion-implanted Gaussian profile are presented.
Dual-band reflector-feed element for frequency-reuse applications
- Author(s): J.H. Cowan
- Source: Electronics Letters, Volume 9, Issue 25, p. 596 –597
- DOI: 10.1049/el:19730441
- Type: Article
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p.
596
–597
(2)
Proposed frequency-reuse systems have created a need for reflector-feed elements that generate symmetrical primary patterns with low crosspolar content. The letter describes a horn radiator of only 1λ diameter that meets these requirements over two discrete frequency bands.
Crosspolarisation with Cassegrainian and front-fed reflectors
- Author(s): P.J. Wood
- Source: Electronics Letters, Volume 9, Issue 25, p. 597 –598
- DOI: 10.1049/el:19730442
- Type: Article
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p.
597
–598
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Some controversy has recently arisen about the relative susceptibility of Cassegrainian and front-fed reflectors to depolarisation effects in a polarisation-diversity application. The letter consolidates the case presented for front feeds in an earlier communication, and gives examples from some experimental measurements.
Practical 2-dimensional bipolar-transistor-analysis algorithm
- Author(s): E.J. Zaluska ; P.A. Dubock ; H.A. Kemhadjian
- Source: Electronics Letters, Volume 9, Issue 25, p. 599 –600
- DOI: 10.1049/el:19730443
- Type: Article
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p.
599
–600
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Extensions to a 2-dimensional bipolar-transistor-modelling algorithm are described. They enable practical high-frequency silicon devices to be analysed in a time appreciably shorter than previously reported schemes. This allows device properties to be economically explored over a wide range of bias currents and voltages.
Simple theory for threshold-voltage modulation in short-channel m.o.s. transistors
- Author(s): R.C. Varshney
- Source: Electronics Letters, Volume 9, Issue 25, p. 600 –602
- DOI: 10.1049/el:19730444
- Type: Article
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p.
600
–602
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The threshold-voltage modulation ΔVr of m.o.s. transistors, due to substrate bias VR, is determined using a simple 2-dimensional approach. It is shown that, for a given substrate bias, the ΔVT of short-channel devices is less than that of long-channel devices. It is also shown that the intrinsic (zero substrate bias) threshold voltage of short-channel devices is less than that of long-channel devices. The functional dependence of ΔVT on VR is derived, and verified experimentally.
Effect of doping profile on avalanche noise of silicon IMPATT diodes
- Author(s): E. Vollmann
- Source: Electronics Letters, Volume 9, Issue 25, p. 602 –603
- DOI: 10.1049/el:19730445
- Type: Article
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p.
602
–603
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The open-circuit spectral noise-voltage density e2/Δf of silicon IMPATT diodes with different punchthrough factors has been measured. A noise reduction has been obtained for diodes with punchthrough factors > 1. This is in agreement with theoretical curves calculated on the basis of the noise theory of Gummel and Blue.
J.F.E.T. bucket-brigade circuit: some recent experimental results
- Author(s): M.B. Barron and M.B. Barron
- Source: Electronics Letters, Volume 9, Issue 25, p. 603 –604
- DOI: 10.1049/el:19730446
- Type: Article
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p.
603
–604
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A bucket-brigade circuit implementation with junction field-effect transistors (j.f.e.t.) offers a significant improvement in maximum data rates for digital operation, and in maximum bandwidth for analogue operation. Some 10-stage monolithic j.f.e.t. brigades have recently been built and successfully operated at data rates of 50 MHz. In the Letter, the j.f.e.t. structure is briefly described and some experimental results are presented.
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